SEÇİLMİŞ ELMİ ƏSƏRLƏRİ

  1. Mamedov    A.M, Lebedeva N.N., Efendieva İ.M. “Domain Structure and Optical Properties of Gadolinium Molibdate”, 14-th RE Research Conference, Jun. 25-28, 1979, North Dacota State Univ., USA, 1979.
  2. Mamedov, AM; Shilnikov, VI; Efendieva I.M.  «Analysis of Ba2NaNb5O15 reflection spectra by the Kramers-Kronig method» Optika I Spektroskopiya,v.53, i.1, p.5-7, 1982
  3.  Mamedov     M.A., Osman  M.A., Efendieva I.M. “VUV spectra and electron structure of oxygen-tetrahedral ferroelectrics” V European Meeting on Ferro-electricity. (Abstracts), Malaga, Spain,  p.4014, 1983.
  4. Osman MA., Mamedov AM.,Efendieva İ.M. ” Light-scattering in Gadolinium Molybdate due to domain-structure” Journal of physics-condensed matter,v. 2,i.28,1989.“
  5. Afandiyeva I.M., Askerov Sh.G., Abdullayeva L.K., Aslanov Sh.S. The obtaining of Al-Ti10W90/n-Si Schottky diodes and investigation of their interface surface state density. Solid State Electronics, 51,2007, p.1096.
  6. Əfəndiyeva İ.M., Ş.Q.Əskərov, L.K.Abdullayeva,və b.”Al0,8Ni0,2/nSi diodları ayrılma sərhəddinin electron xassələri” Fizika,XIII, №3,2007, s. 62.
  7. Afandiyeva I.M.,  Dökme İ., Altındal Ş.,Bülbül M., Tataroĝlu A. Frequency and voltage effects on the dielectric properties and electrical conductivity of Al-TiW-Pd2Si/n-Si structures. Microelectronic Engineering,  85, 2008, p.247.
  8. Afandiyeva I.M.,  Dökme İ., Altındal Ş., Askerov Sh.G., Abdullayeva L.K. The frequency and voltage dependent electrical characteristics of Al-TiW- Pd2Si/n-Si structure  using I-V, C-V and G/ω-V measurements. Microelectronic Engineering. 85, 2008, p.365.
  9. Dökme İ., Altındal Ş., Afandiyeva I.M. The distribution of the barrier height in Al-TiW-Pd2Si/n-Si Schottky diodes from I-V-T measurements. Semiconductor Science and Technology. 23, 2008, 1.
  10. Эфендиева И.М., “Определение эффективной толщины зазора КМП с поликристаллическим металлическим слоем”,Труды Международной Конференции “Научно-технический  прогресс и современная авиация “, Баку, февр.2009. с.311.
  11. Эфендиева И.М., “Исследование электрофизических параметров контактов металл-полупроводник Al-TiCu/n-Si  с поликристаллической металлической пленкой”AMEA-nın  Xəbərləri, Fiz. riү. elm. seriү. XXX, №2,  2010, c.118.
  12. Эфендиева И.М., “Фрактальные исследования границы раздела КМП Al-TiCu/n-Si”Journal of Qafgaz University,vol.1, 29, 2010, c. 86.
    13. Journal of Alloys and Compounds, 503,2010, p. 96.
  13. Üslü H., Dökme İ.,  Altındal Ş., Afandiyeva I.M.,  Illumination effect on I-V, C-V and G/w-V characteristics of Al-TiWPd2Si/ n-Si structures at room temperature. Surface and Interface Analysis.42, 2010, p.807.
  14. Afandiyeva I.M. , Özçelik S, Abdullayeva L.K. Photoluminescence study of metal film’s impact on silicon energetic structure. Journal of Qafgaz University,vol.1,  29, 2010, p. 96.
  15. Afandiyeva I.M. The temperature, frequency and voltage dependent characteristics of Al-TiW-Pd2Si/n-Si structure using , and  measurements. Azerbaijan Journal of Physics - Fizika, XVI,3-4, 2010, p.102.
  16. Afandiyeva I.M.  Frequency, voltage and temperature effects on the inductive properties of Al-TiW-PtSi/n-Si Schottky diodes. AMEA-nın  Xəbərləri, Fiz. riү. elm. seriү. XXXI, №2, 2011,s. 29.
  17. Afandiyeva I.M., M.Bülbül, Ş.Altındal, S.Bengi. Frequency dependent dielectric properties and electrical conductivity of  Platinum silicide/Si contact structures with diffusion barrier. Microelectronic Engineering, 93, 2012, p. 50.
  18. I.M. Afandiyeva, S. Demirezen, S. Altındal. Temperature dependence of forward and reverse bias current–voltage characteristics in Al–TiW–PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier. Journal of Alloys and Compounds, 552 (2013), p. 423-429.
  19. Afandiyeva I.M, Ş. Altindal, E. Maril, T. Z. Guliyeva  et al. “The investigation of tunnel properties of Al-TiW-PtSi/n-Si (111)(MS) Schottky barrier diodes (SBDs) in the wide temperature range” Journ. of Qafgaz University,vol.2, N2 , 2014, p.107-118.
  20. И.М. Эфендиева, Л.К.Абдуллаева, Т.З.Кулиева, и др. «АС-проводимость дио­дов Шоттки   Al-TiW-PtSi/n-Si» Journ. of Qafgaz University, 2015,v.3, N 1. P.49-52.
  21. I.M.Afandiyeva, Ş. Altindal,  L. K. Abdullayeva et.al. “The frequency and voltage dependentof C-V and G/w-V of Al- TiW-PtSi/n-Si structures at  room temperature”  Journ. of Qafgaz University, 2015,v.3, N 2. P.105-111.
  22. Afandiyeva İ.M., Askerov Sh. G., Abdullayeva L.K.,et al. “İllumination dependent I-V characteristics of PtSi/n-Si( 111) Schottky barrier diodes (SBDS) at room temperature” Journ. of Qafgaz University, 2016,v.4 №2, p.106-114.
  23. I.M.Afandiyeva, L.K.Abdullayeva, T.Z.Guliyeva, SH.M.Gojayeva “Influence of Illumination on Dielectric Properties of Al-TiW-PtSi/n-Si Schottky Diodes“Baku, Int Confr, “ Modern trends in Physics”22 april 2017,p.33-37,(Baku, Fizfak,2017).
  24. I.M. Afandiyeva, Ş. Altındal, L.K. Abdullayeva “Illumination dependent electrical characteristics of PtSi/n-Si(111) Schottky barrier diodes (SBDs) at room temperature.
    “J. Mo­dern Technology & EngineeringVol.2, No.1, 2017, pp.43-56.
  25. I.M. Afandiyeva , Ş. Altındal , L.K.Abdullayeva,A.İ.Bayramova “"Self-assembled  patches  in PtSi/n-Si(111) diodes"  J. Semicond. 2018, 39 054002.
  26. I.M.Afandiyeva, Ş. Altιndal.Temperature dependenced conductivity of PtSi/n-Si Schottky diodes with self-assembled patches. Proceedings Paper, International Conference on Modern Trends in Physics,May 01-03, 2019, Modern Trends in Physics-Series   pp.: 80-83 .
  27. И.М.Эфендиева, Н.Н.Годжаев. Влияние температуры и освещения на характеристики диода шотткиPtSi/n-Si(111). AZMİU 2019,“Maqnityumşaq ərintilərin informasiya texnologiyalarinda və hərbi sənayedə tətbiqi perspektivləri” Beynəlxalq elmi-praktik konfransin materiallari,Bakı, 09-10 oktyabr 2019 –cu il, səh.99-103.
  28. İ.M.Əfəndiyeva, Ç.Q.Axundov. Al-TiW-Pd2Si/n-Si Şottki diodunda gərginliyin paylanması.Journal of Baku Engineering University, Physics 2020. Volume 4, Number 1,p.48-52
  29. İ.M.Əfəndiyeva, M.N.Ağayev, A.R.Rəsulova. Pd2Si/n- si  Şottki diodlarının dielektrik parametrlərinə işığın təsiri.Sumqayıt dövlət Universiteti, Konfrans materialları/Tətbiqi fizika və energeti-kanın aktual məsələləri// II Beynəlxalq elmi konfrans (12-13 noyabr 2020-ci il, səh.104-109
  30. İ.M.Əfəndiyeva, M.N.Agayev,  Influence of illumi-nation intensity on ac-conductivity (σac) of Pd2Si/n-Si Schottky diode. Journal of Baku Engineering University Physics 2020. Volume 4, Number 1,p.35-38.
  31. İ.M.Afandiyeva ,R.F. Babayeva, Ch.G.Akhundov . Temperature and surface states influence on the identifying of schottky diode parameters. 7thİnternational Conference Modern Trends in Physics, 2021, 15-17 December, Baku
  32. İ.M.Afandiyeva ,R.F. Babayeva. The potential barrier height and profile of surfacestates of Re/n-GaAs Schottky barrier diode.  7thİnternational Conference Modern Trends in Physics, 2021, 15-17 December, Baku. vol.2.pp. 97-103
  33. И.М.Эфендиева, Ч.Г.Ахундов. Поверхностные состояния и распределение напряжения в диодах Шоттки Pd2Si/n-Si(111). Зависимость от температуры. Sustainable development strategy: global trends, national experiences and new goals ,Proc. of The First Int. Sci. Conf. Mingachevir, 10-11 December 2021, VOL.II,p.504-506.
  34. I.M.Afandiyeva,Ch.G.Akxundov. Effect of light intensity on the dielectric parameters of Pd2Si/n-Si Shottky diode. Analysis with the using of electric module formalism. Journal of Baku Engineering University, Physics,  Vol. 4, Number, 2021 N1 , p.19-24.
  35. I.M. Afandiyeva. The investigation of Pd2Si/n-Si(111) Schottky barrier diodes (SBDs) from C-V-T and G/ω-V-T measurements on the basis the generalized model. International Conference on Advanced Materials Science & Engineering and High Tech Devices Applications; Exhibition (ICMATSE 2022), October 27-29, 2022, Ankara, TURKEY,p.145-153.
  36. G.M.Eyvazova, I.M.Afandiyeva,V.I.Orbukh, N.N.Lebedeva. Electrical parameters of zeolite with different silver content. ETN Fizika İnstitutu/ BK “Nəzəri və tətbiqi fizikanın inkişafı”, H.Əliyev 100il.AJP FIZIKA C, 8-9 iyun 2023 section C: Conf. (Azerbaiyjan Journal of Physics, Fizika) pp.57-60.
  37. I.M.Afandiyeva, S.A.Yerişkin , E.A.Rasulov, S.I.Amirova. The investigation of the voltage and frequency dependent electrical characteristics of Re/n-GaAs Schottky barrier diode using I–V, C–V and G/ω–V measurements. AJP FIZIKA 2024 vol. XXX №3, section: E, p.37-43.
  38. I.M.Afandiyeva, E.R.Bakhtiyarli. A comparison of basic electrical parameters of the Al/SiO2/p-Si (MIS) structure obtained by Thermionic Emission (TE), and Cheung functions. AJP FIZIKA 2024 section C: Conference. Magsud Aliyev-100,p.91-95.
  39. Izzat Afandiyeva and Elvin Bakhtiyarli. Influence of Ac-Signal Amplitude on the Dielectric Properties of Al-Tiw-Ptsi/N-Si Schottky Diodes. J Mater Sci Manufac Res, 2024,Vol. 5(7): 1-5.
  40. A.Şh.Abdinov, I.M. Afandiyeva, E.R.Bakhtiyarli. Investigation of basic electrical parametrs of Au/Pure PVP/n-Si MPS structure by using both current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Int. Conf. on Energy and Environmental Technologies in Engineering and Architecture (ICETEA 2024)p.110-11.
  41. Ş.Altındal, I.M. Afandiyeva, E.R.Bakhtiyarli. On the investigation frequency and voltage dependence complex dielectric, and ac conductivity by using dielectric spectroscopy method in Au/(Zn:PVA)/n-Si (MPS) structures. The Int. Conf. on Energy and Environmental Technologies in Engineering and Architecture (ICETEA 2024),p.114-117.
  42. İ.M.Əfəndiyeva /Şottki diodları əsasında çoxfunksiyalı cihazlar/monoqrafiya,Bakı, 2025, “Füyuzat” , 350s.
    https://scholar.google.com/citations?view_op=list_works&hl=ru&authuser=7&user=ritrIC0AAAAJ
    https://www.webofscience.com/wos/woscc/summary/2d24ff6a-e30d-4730-bde1-2063b2ae3471-a72d628d/relevance/1
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Bakı Dövlət Universiteti, əsas bina 3-cü mərtəbə, 319-cu otaq, Bakı şəhəri, akademik Zahid Xəlilov küçəsi, 33, AZ 1148
Tel.: 994125390523 [email protected] Bütün hüquqlar qorunur. Bakı-2023
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